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SSF3612 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – PWM applications | |||
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SSF3612
DESCRIPTION
The SSF3612 uses advanced trench
technology to provide excellent RDS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
â VDS = 30V,ID =11A
RDS(ON) < 17m⦠@ VGS=4.5V
RDS(ON) < 12m⦠@ VGS=10V
â High Power and current handing capability
â Lead free product is acquired
â Surface Mount Package
D
G
S
Schematic diagram
Marking and pin Assignment
Application
âPWM applications
âLoad switch
âPower management
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF3612
SSF3612
SOP-8
Ã330mm
SOP-8 top view
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID(25â)
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID(70â)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
11
9
50
3.1
-55 To 150
Unit
V
V
A
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
40
â/W
ELECTRICAL CHARACTERISTICS (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max
30
Unit
V
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.1
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