SSF3611E Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
V_DSS
-30 V
R_DS(on) 10.6 mΩ(typ.)
I_D
-12A
SOP-8
Features and Benefits:
„ Advanced trench MOSFET process technology
„ Special designed for PWM, load switching and
general purpose applications
„ Ultra low on-resistance with low gate charge
„ Fast switching and reverse body recovery
„ 150℃ operating temperature
SSF3611E
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Symbol
I_D @ TC = 25°C
I_D @ TC = 100°C
I_DM
P_D @TC = 25°C
V_DS
V_GS
T_J T_STG
Parameter
Continuous Drain Current, V_GS @ 10V①
Continuous Drain Current, V_GS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
-12
-7.4
-48
2
-30
± 20
-55 to +150
Units
A
W
V
V
°C
Thermal Resistance
Symbol
Characterizes
R_θJA
Junction-to-ambient (t ≤ 10s) ④
©Silikron Semiconductor CO.,LTD.
2011.05.25
www.silikron.com
Typ.
—
Max.
62.5
Units
℃/W
Version : 1.0
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