SSF3605S Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

Main Product Characteristics:
V_DSS
-30V
R_DS(on) 5.1mΩ(typ.)
I_D
-15A
SOP-8
Features and Benefits:
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
SSF3605S
D
G
S
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=0.1mH
Avalanche Current @ L=0.1mH
Operating Junction and Storage Temperature Range
Max.
-15
-12.8
-120
3.1
-30
± 25
180
60
-55 to +150
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s) ④
Typ.
—
Max.
40
Units
A
W
V
V
mJ
A
°C
Units
℃/W
©Silikron Semiconductor CO.,LTD.
2012.04.09
www.silikron.com
Version : 1.2(preliminary)
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