SSF3339 Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

Main Product Characteristics:
V_DSS
R_DS(on)
I_D
-30V
37mΩ (typ.)
-4.1A ①
SOT-23
Features and Benefits:
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
SSF3339
D
G
Marking and pin
Assignment
S
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating: @T_A=25℃ unless otherwise specified
Symbol
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current ②
Power Dissipation ③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Max.
-4.1 ①
-3.5 ①
-20
1.4
-30
± 20
-55 to +150
Units
A
W
V
V
°C
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s) ④
©Silikron Semiconductor CO.,LTD.
2013.03.01
www.silikron.com
Typ.
—
Max.
90
Units
°C /W
Version : 1.1
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