SSF3338 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – PWM applications

SSF3338
DESCRIPTION
The SSF3338 uses advanced trench
technology to provide excellent R_DS(ON)
and low gate charge .This device is
suitable for use as a load switch or in
PWM applications.
GENERAL FEATURES
● V_DS = 30V,I_D =4A
R_DS(ON) < 65mΩ @ V_GS=4.5V
R_DS(ON) < 47mΩ @ V_GS=10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D
G
S
Schematic diagram
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
3338
SSF3338
SOT-23
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
30
±20
4
20
1.25
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
130
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=30V,V_GS=0V
Min Typ Max
30
0.5
Unit
V
μA
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1
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