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SSF32E0E Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability | |||
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GENERAL FEATURES
â VDS =30V,ID = 0.1A
RDS(ON) < 8Ω @ VGS=4V
RDS(ON) < 13Ω @ VGS=2.5V
ESD Ratingï¼1000V HBM
â High Power and current handing capability
â Lead free product is acquired
â Surface Mount Package
SSF32E0E
Schematic diagram
APPLICATION
âDirect Logic-Level Interface: TTL/CMOS
âDrivers: Relays, Solenoids, Lamps,
Hammers,Display, Memories, Transistors, etc.
âBattery Operated Systems
âSolid-State Relays
Marking and pin Assignment
SOT-523 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package Reel Size
S32E
SSF32E0E
SOT-523
Ã180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
ID
ID (70â)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±20
0.1
0.07
0.4
0.2
-55 To 150
Unit
V
V
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
400
â/W
ELECTRICAL CHARACTERISTICS (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Min Typ Max Unit
30
V
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.2
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