SSF3117 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – DC-DC conversion applications

SSF3117
DESCRIPTION
The SSF3117 uses advanced trench technology
to provide excellent R_DS(ON) and low gate charge .
A Schottky diode is provided to facilitate the
implementation of a bidirectional blocking switch,
or for DC-DC conversion applications.
GENERAL FEATURES
● MOSFET
V_DS = -20V,I_D = -3.3A
R_DS(ON) < 180mΩ @ V_GS=-1.8V
R_DS(ON) < 120mΩ @ V_GS=-2.5V
R_DS(ON) < 90mΩ @ V_GS=-4.5V
● SCHOTTKY
V_R = 30V, I_F = 2A, V_F<0.53V @ 1.0A
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●DC-DC conversion applications
●Load switch
●Power management
DFN2X2-6L
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
3117
SSF3117
DFN2X2-6L
－
Tape width
－
Quantity
－
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
MOSFET
Drain-Source Voltage
V_DS
-20
Gate-Source Voltage
V_GS
±8
Continuous Drain Current (Note 1)
I_D
-3.3
Pulsed Drain Current
I_DM
-20
Schottky reverse voltage
V_R
Continuous Forward Current
I_F
Maximum Power Dissipation
P_D
1.5
Operating Junction and Storage Temperature Range T_J,T_STG
-55 To 150
Schottky
Unit
V
V
A
A
30
V
2
A
W
-55 To 150
℃
THERMAL CHARACTERISTICS
MOSFET
Thermal Resistance, Junction-to-Ambient (Note 2)
R_θJA
54
℃ /W
©Silikron Semiconductor CO.,LTD.
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