SSF3056C Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
NMOS
PMOS
V_DSS
30V
-30V
R_DS(on) 37mohm(typ.) 68mohm(typ.)
D1
S1
NMOS
D1
G1
D2
S2
PMOS
D2
G2
I_D
5A
Features and Benefits:
-4.5A
DFN2X3-8L
Bottom View
 Advanced trench MOSFET process technology
 Special designed for buck-boost circuit, DSC, portable
devices and general purpose applications
 Ultra low on-resistance with low gate charge
 150℃ operating temperature
SSF3056C
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others
applications
Absolute max Rating:
Symbol
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Continuous Drain Current, VGS @ 4.5V①
Continuous Drain Current, VGS @ 4.5V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature
Range
Max.
N-channel P-channel
5
-4.5
4.2
-3.4
18.8
-12.5
2.1
1.8
30
-30
± 12
± 12
-55 to + 150 -55 to + 150
Units
A
W
V
V
°C
©Silikron Semiconductor CO.,LTD.
2011.07.15
www.silikron.com
Version : 1.0 preliminary
page 1 of 6