SSF3051G7 Datasheet, PDF (1/9 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
V_DSS
-30V
R_DS(on) 45mohm(typ.)
I_D
-4A
SOT23-6
Features and Benefits:
„ Advanced trench MOSFET process technology
„ Special designed for buttery protection, load
switching and general power management
„ Ultra low on-resistance with low gate charge
„ Fast switching and reverse body recovery
„ 150℃ operating temperature
SSF3051G7
D
G
Marking and pin
Assignment
S
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications
Absolute max Rating:
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
I_D
I_DM
P_D
T_J,T_STG
Limit
-30
±25
-4
-25
1.7
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Resistance
Thermal Resistance, Junction-to-Ambient (Note 2)
Thermal Resistance, Junction-to-Case(Note 2)
R_θJA
R_θJC
75
℃ /W
30
℃ /W
©Silikron Semiconductor CO.,LTD.
2011.10.25
www.silikron.com
Version : 1.0
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