SSF3022D Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench process technology

SSF3022D
Feathers:
ID =60A
„ Advanced trench process technology
BV=100V
„ Ultra low Rdson, typical 16mohm
Rdson=22mohm
„ High avalanche energy, 100% test
„ Fully characterized avalanche voltage and current
Description:
The SSF3022 is a new generation of middle voltage and high
current N–Channel enhancement mode trench power
SSF3022D TOP View (DPAK)
MOSFET. This new technology increases the device reliability
and electrical parameter repeatability. SSF3022 is assembled
in high reliability and qualified assembly house.
Application:
„ Power switching application
Absolute Maximum Ratings
Parameter
I_D@T_c=25ْ C Continuous drain current,VGS@10V
I_D@T_c=100ْC Continuous drain current,VGS@10V
I_DM
Pulsed drain current ①
P_D@T_C=25ْC Power dissipation
Linear derating factor
V_GS
Gate-to-Source voltage
E_AS
Single pulse avalanche energy ②
E_AR
T_J
T_STG
Repetitive avalanche energy
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
R_θJC Junction-to-case
R_θJA Junction-to-ambient
Min.
—
—
Max.
60
50
240
100
2.0
±20
240
TBD
–55 to +150
Typ.
Max.
1.25
—
—
62.5
Units
A
W
W/ْ C
V
mJ
ْC
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ.
BV_DSS
R_DS(on)
V_GS(th)
g_fs
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Forward transconductance
100 —
— 16
2.0 3.0
- 58
——
I_DSS
Drain-to-Source leakage current
——
Max. Units
—V
22 mΩ
4.0 V
—S
1
μA
10
I_GSS
Gate-to-Source forward leakage
©Silikron Semiconductor CO.,LTD
2008.11.13
— — 100 nA
Version : 1.0
Test Conditions
V_GS=0V,I_D=250μA
V_GS=10V,I_D=30A
V_DS=V_GS,I_D=250μA
V_DS=5V,I_D=30A
V_DS=100V,V_GS=0V
V_DS=100V,
V_GS=0V,T_J=150ْC
V_GS=20V
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