SSF3018D Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench process technology

SSF3018D
Feathers:
„ Advanced trench process technology
„ Special designed for Convertors and power controls
„ High density cell design for ultra low Rdson
„ Fully characterized Avalanche voltage and current
„ Avalanche Energy 100% test
Description:
The SSF3018D is a new generation of middle voltage and
high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the cell density
and reduces the on-resistance; its typical Rdson can reduce
to 11.6mohm.
Application:
„ Power switching application
Absolute Maximum Ratings
Parameter
I_D@T_c=25ْ C Continuous drain current,VGS@10V
I_D@T_c=100ْC
I_DM
Continuous drain current,VGS@10V
Pulsed drain current ①
P_D@T_C=25ْC
Power dissipation
Linear derating factor
V_GS
Gate-to-Source voltage
E_AS
Single pulse avalanche energy ②
E_AR
Repetitive avalanche energy
T_J
T_STG
Operating Junction and
Storage Temperature Range
ID=80A
BV=100V
Rdson=14mohm
SSF3018D TOP View (TO220)
Max.
80
70
320
192
2.0
±20
460
TBD
Units
A
W
W/ْ C
V
mJ
–55 to +150
ْC
Thermal Resistance
R_θJC
Parameter
Junction-to-case
Min.
Typ.
Max.
—
0.65
—
Units
ْC/W
Electrical Characteristics @TJ=25 ْC(unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV_DSS
Drain-to-Source breakdown voltage 100 —
—V
R_DS(on)
Static Drain-to-Source on-resistance — 11.6 14 mΩ
V_GS(th)
Gate threshold voltage
2.0
4.0 V
g_fs
Forward transconductance
33 55 — S
——
1
I_DSS
Drain-to-Source leakage current
μA
——
5
Gate-to-Source forward leakage
— — 200
I_GSS
nA
Gate-to-Source reverse leakage
— — -200
Q_g
Total gate charge
— 60 — nC
Q_gs
Gate-to-Source charge
— 21 —
Test Conditions
V_GS=0V,I_D=250μA
V_GS=10V,I_D=30A
V_DS=V_GS,I_D=250μA
V_DS=10V,I_D=40A
V_DS=100V,V_GS=0V
V_DS=100V,
V_GS=0V,T_J=150ْC
V_GS=20V
V_GS=-20V
I_D=25A
V_DS=0.5V_DSS
©Silikron Semiconductor CO. LTD.
2009.7.15
Version: 1.0
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