SSF3002EG1 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
V_DSS
30V
R_DS(on) 1ohm(typ.)
I_D
0.5A①
SOT23
Features andBenefits:
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
 ESD Protected, HBM 1KV
SSF3002EG1
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniquesto achieve the high cell density and reduces the
on-resistance with high repetitiveavalanche rating. These features combine to makethis design an extremely
efficient and reliable devicefor use in power switching applicationand a wide varietyof other applications
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current②
Power Dissipation
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction
Storage Temperature Range
Max.
0.5 ①
0.3 ①
3
0.7
30
± 20
-55 to + 150
Units
A
W
V
V
°C
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s)③
©Silikron Semiconductor CO.,LTD.
2015.01.23
www.silikron.com
Typ.
—
Max.
180
Preliminary Version: 1.0
Units
℃/W
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