SSF2N60 Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – Main Product Characteristics

Main Product Characteristics:
V_DSS
600V
R_DS(on) 3.6ohm(typ.)
I_D
2A
TO220
Features and Benefits:
„ Advanced Process Technology
„ Special designed for PWM, load switching and
general purpose applications
„ Ultra low on-resistance with low gate charge
„ Fast switching and reverse body recovery
„ 150℃ operating temperature
SSF2N60
Marking and pin
Assignment
Schematic diagram
Description:
These N-Channel enhancement mode power field effect transistors are produced using silikron
proprietary MOSFET technology. This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching performance, and withstand high energy
pulse in the avalanche and commutation mode. These devices are well suited for high efficiency
switch mode power supplies
Absolute max Rating:
Symbol
I_D @ TC = 25°C
I_D @ TC = 100°C
I_DM
P_D @TC = 25°C
V_DS
V_GS
E_AS
I_AS
T_J T_STG
Parameter
Continuous Drain Current, V_GS @ 10V①
Continuous Drain Current, V_GS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=55mH
Avalanche Current @ L=55mH
Operating Junction and Storage Temperature Range
Max.
2
1.3
8
54
0.43
600
± 30
110
2
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2011.08.18
www.silikron.com
Version : 1.0
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