SSF2841 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSF2841
DESCRIPTION
The SSF2841 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as -0.7V. This device is suitable
for use as a load switch or in PWM applications.
GENERAL FEATURES
● V_DS = -20V,I_D = -5A
R_DS(ON) <72mΩ @ V_GS=-2.5V
R_DS(ON) < 50mΩ @ V_GS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
D1
D2
S1
S1
S₈S₂F₀28₅4_A1
S2
S2
G1
G2
Application
●PWM applications
●Load switch
●Power management
Pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF2841
SSF2841
TSSOP-8
－
TSSOP-8 top view
Tape width
－
Quantity
－
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-20
±12
-5
-20
3.2
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
83
℃ /W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=-250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=-20V,V_GS=0V
Gate-Body Leakage Current
I_GSS
V_GS=±12V,V_DS=0V
Min Typ Max Unit
-20
V
-1
μA
±100
nA
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
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