SSF2816EB Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handling capability

DESCRIPTION
The SSF2816EB uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 0.75V.
SSF2816EB
GENERAL FEATURES
● V_DS = 20V,I_D = 7A
R_DS(ON) < 30mΩ @ V_GS=2.5V
R_DS(ON) < 26mΩ @ V_GS=3.1V
R_DS(ON) < 23mΩ @ V_GS=4V
R_DS(ON) < 22mΩ @ V_GS=4.5V
ESD Rating：2500V HBM
● High Power and current handling capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
TSSOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF2816EB
SSF2816EB
TSSOP-8
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_D
I_DM
P_D
T_J,T_STG
Limit
20
±12
7
25
1.5
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
83
℃/W
Min Typ Max Unit
20
V
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1
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