SSF2810EH2 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

Main Product Characteristics:
V_DSS
R_DS(on)
I_D
20V
10mΩ (typ.)
8A①
Features and Benefits:
TSSOP-8
 Advanced MOSFET process technology
 Ultra low on-resistance with low gate charge
 High Power and current handing capability
 150℃ operating temperature
 G/S ESD protect 2KV (HBM)
SSF2810EH2
Marking and pin
Assignment
Schematic diagram
Description:
The SSF2810EH2 series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJA
Characterizes
Junction-to-ambient (t ≤ 10s) ④
Max.
8①
6.2 ①
25
2
0.5
20
± 10
-55 to +150
Typ.
—
Max.
90
Units
A
W
W/°C
V
V
°C
Units
℃/W
©Silikron Semiconductor CO., LTD.
2013.09.20
www.silikron.com
Version: 1.0
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