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SSF2715 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Extremely high dv/dt capability | |||
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SSF2715
Features
â Extremely high dv/dt capability
â Low Gate Charge Qg results in
Simple Drive Requirement
â 100% avalanche tested
â Gate charge minimized
â Very low intrinsic capacitances
â Very good manufacturing repeatability
Description
SSF2715 is a new generation of high voltage
NâChannel enhancement mode power MOSFETs and
is obtained through an extreme optimization layout design,
in additional to pushing on-resistance significantly down,
special care is taken to ensure a very good dv/dt capability,
provide superior switching performance, withstand high
energy pulse in the avalanche, and increases packing density.
Application
â High current, high speed switching
â Lighting
â Ideal for off-line power supply, adaptor, PFC
VDSS = 500V
ID = 5A
RDS(ON) = 1.2Ω
SSF2715 TOP View (TO220)
Absolute Maximum Ratings
Parameter
ID@Tc=25 ÙC Continuous Drain Current,VGS@10V
ID@Tc=100ÙC Continuous Drain Current,VGS@10V
IDM
Pulsed Drain Current â
PD@TC=25ÙC Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy â¡
IAR
Avalanche Current â
EAR
Repetitive Avalanche Energy â
dv/dt
Peak Diode Recovery dv/dt â¢
TJ
Operating Junction and
TSTG
Storage Temperature Range
Max.
5
3
20
80
0.67
±30
120
5
8.5
4.5
â55 to +150
Units
A
W
W/ ÙC
V
mJ
A
mJ
V/ns
ÙC
Thermal Resistance
Parameter
Min.
Typ.
Max.
RθJC
Junction-to-case
â
â
1.56
RθCS
Case-to-Sink,Flat,Greased Surface
â
0.50
â
RθJA
Junction-to-Ambient
â
â
62.5
Units
ÙC/W
1
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