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SSF2701 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability
SSF2701
GENERAL FEATURES
● N-Channel
VDS = 20V,ID = 2.4A
RDS(ON) < 125mΩ @ VGS=4.5V
RDS(ON) < 200mΩ @ VGS=2.5V
● P-Channel
VDS = -20V,ID = -2.8A
RDS(ON) < 100mΩ @ VGS=-4.5V
RDS(ON) < 150mΩ @ VGS=-2.5V
N-channel P-channel
Schematic diagram
●High Power and current handing capability
●Lead free product is acquired
●Surface Mount Package
Pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2701
SSF2701
TSOP-6
-
TSOP-6 top view
Tape width
-
Quantity
-
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel
Unit
Drain-Source Voltage
VDS
20
-20
V
Gate-Source Voltage
Continuous Drain Current
TA=25℃
TA=70℃
VGS
±12
±12
V
2.4
-2.8
ID
A
1.7
-2
Pulsed Drain Current (Note 1)
Maximum Power Dissipation
TA=25℃
TA=70℃
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
8
-10
A
1.15
1.15
W
0.6
0.6
-55 To 150 -55 To 150
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note2)
N-Ch
87
RθJA
℃/W
P-Ch
87
©Silikron Semiconductor CO.,LTD.
1
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