SSF26NS60A Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – High dv/dt and avalanche capabilities

Main Product Characteristics
V_DSS
600V
R_DS(on) 0.135Ω(typ.)
I_D
20A
D2PAK
Features and Benefits
„ High dv/dt and avalanche capabilities
„ 100% avalanche tested
„ Low input capacitance and gate charge
„ Low gate input resistance
SSF26NS60A
Marking and Pin
Assignment
Schematic Diagram
Description
The SSF26NS60A series MOSFETs is a new technology, which combines an innovative
technology and advance process. This new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute Max Rating
Symbol
I_D @ TC = 25°C
I_D @ TC = 100°C
I_DM
P_D @TC = 25°C
V_DS
V_GS
E_AS
I_AS
T_J T_STG
Parameter
Continuous Drain Current, V_GS @ 10V①
Continuous Drain Current, V_GS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=13.8mH
Avalanche Current @ L=13.8mH
Operating Junction and Storage Temperature Range
Max.
20
13
80
208
1.66
600
± 30
248
6
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2014.3.27
www.silikron.com
Version : 1.0
page 1 of 8