SSF26NS60 Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – High dv/dt and avalanche capabilities

Main Product Characteristics:
V_DSS
600V
R_DS(on) 0.135Ω(typ.)
I_D
20A
TO220
Features and Benefits:
 High dv/dt and avalanche capabilities
 100% avalanche tested
 Low input capacitance and gate charge
 Low gate input resistance
SSF26NS60
Marking and pin
Assignment
Schematic diagram
Description:
The SSF26NS60 series MOSFETs is a new technology, which combines an innovative super
junction technology and advance process. This new technology achieves low Rdson, energy
saving, high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=13.8mH
Avalanche Current @ L=13.8mH
Operating Junction and Storage Temperature Range
Max.
20
13
80
208
1.66
600
± 30
248
6
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2012.1.10
www.silikron.com
Version : 1.4
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