SSF2649 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
V_DSS
-20V
R_DS(on) 49mohm(typ.)
I_D
-7.9A
SOP-8
Features and Benefits:
„ Advanced trench MOSFET process technology
„ Special designed for PWM, load switching and
general purpose applications
„ Ultra low on-resistance with low gate charge
„ Fast switching and reverse body recovery
„ 150℃ operating temperature
SSF2649
D1
D2
G1
G2
S1
S2
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Drain-Source Voltage
Gate-Source Voltage
Parameter
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
I_D
I_DM
P_D
T_J,T_STG
Limit
Unit
-20
V
±10
V
-7.9
A
-30
A
5
W
-55 To 150
℃
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
85
℃/W
©Silikron Semiconductor CO., LTD.
2011.05.25
www.silikron.com
Version: 1.0
page 1 of 6