SSF2637E Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSF2637E
DESCRIPTION
The SSF2637E uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as -0.5V.
GENERAL FEATURES
● V_DS = -20V,I_D =-5.4A
R_DS(ON) < 52mΩ @ V_GS=-2.5V
R_DS(ON) < 43mΩ @ V_GS=-4.5V
ESD Rating：3000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
D DD D
8 7 65
2464371E4
1 2 34
S SSG
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
SOP-8 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2637E
SSF2637E
SOP-8
Tape width
Quantity
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-20
±12
-5.4
-30
1.9
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
40
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=-250μA
Min Typ Max Unit
-20
V
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