SSF2610E Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

DESCRIPTION
The SSF2610E uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
SSF2610E
GENERAL FEATURES
● V_DS = 20V,I_D = 8A
R_DS(ON) < 23mΩ @ V_GS=1.8V
R_DS(ON) < 18mΩ @ V_GS=2.5V
R_DS(ON) < 14mΩ @ V_GS=4.5V
ESD Rating：2000V HBM
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Schematic diagram
Marking and pin Assignment
Application
●Battery protection
●Load switch
●Power management
SOP-8 Top View
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
SSF2610E
SSF2610E
SOP-8
Ø330mm
Tape width
12mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D(25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_D(70℃)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
20
±12
8
6.2
25
2
-55 To 150
Unit
V
V
A
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
83
℃/W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Min Typ Max Unit
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
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