SSF2485 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – High Power and current handing capability

SSF2485
DESCRIPTION
The SSF2485 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 2.5V.
D1
D2
G1
G2
GENERAL FEATURES
● V_DS = -20V,I_D = -3A
R_DS(ON) < 150mΩ @ V_GS=-2.5V
R_DS(ON) < 100mΩ @ V_GS=-4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
S1
S2
Schematic diagram
Application
●PWM applications
●Load switch
●Power management
Marking and Pin Assignment
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2485
SSF2485
SOT23-6
Ø180mm
SOT23-6 top view
Tape width
8mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-20
±10
-3
-10
1.1
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
110
℃ /W
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=-250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=-20V,V_GS=0V
Gate-Body Leakage Current
I_GSS
V_GS=±10V,V_DS=0V
Min Typ Max Unit
-20
V
-1
μA
±100
nA
©Silikron Semiconductor CO.,LTD.
1
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