SSF2356G8 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced MOSFET process technology

Main Product Characteristics:
V_DSS
20V
R_DS(on) 0.4Ω (typ.)
I_D
0.54A
Features and Benefits:
SOT-363
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
SSF2356G8
Marking and Pin
Assignment
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Drain-Source Voltage
Gate-Source Voltage
Parameter
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
RθJA
Limit
Unit
20
V
±8
V
0.54
A
1.5
A
0.2
W
-55 To 150
℃
625
℃/W
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
page 1 of 6