SSF2312 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Battery protection

SSF2312
DESCRIPTION
The SSF2312 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
GENERAL FEATURES
● V_DS = 20V,I_D = 4.5A
R_DS(ON) < 40mΩ @ V_GS=2.5V
R_DS(ON) < 33mΩ @ V_GS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery protection
●Load switch
●Power management
D
G
S
Schematic diagram
3D
2312
G1
2S
Marking and pin Assignment
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2312
SSF2312
SOT-23
Ø180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
20
±8
4.5
13.5
1.25
-55 To 150
Unit
V
V
A
A
W
℃
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=20V,V_GS=0V
Gate-Body Leakage Current
I_GSS
V_GS=±8V,V_DS=0V
ON CHARACTERISTICS (Note 3)
100
℃ /W
Min Typ Max
20
1
±100
Unit
V
μA
nA
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
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