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SSF2306 Datasheet, PDF (1/5 Pages) Silikron Semiconductor Co.,LTD. – Battery protection | |||
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SSF2306
DESCRIPTION
The SSF2306 uses advanced trench
technology to provide excellent RDS(ON),
low gate charge and operation with gate
voltages as low as 2.5V.
GENERAL FEATURES
â VDS = 30V,ID = 5A
RDS(ON) < 50m⦠@ VGS=2.5V
RDS(ON) < 35m⦠@ VGS=4.5V
RDS(ON) < 30m⦠@ VGS=10V
â High Power and current handing capability
â Lead free product is acquired
â Surface Mount Package
Application
âBattery protection
âLoad switch
âPower management
D
G
S
Schematic diagram
3D
2306
G1
2S
Marking and pin Assignment
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2306
SSF2306
SOT-23
Ã180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
ID
Drain Current-Continuous@ Current-Pulsed (Note 1)
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
30
±12
5
20
1.38
-55 To 150
Unit
V
V
A
A
W
â
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
90
â /W
ELECTRICAL CHARACTERISTICS (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=30V,VGS=0V
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
Min Typ Max
30
1
±100
Unit
V
μA
nA
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
v1.2
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