SSF2302 Datasheet, PDF (1/7 Pages) Silikron Semiconductor Co.,LTD. – Battery protection

SSF2302
DESCRIPTION
The SSF2302 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a Battery protection or in other Switching
application.
GENERAL FEATURES
● V_DS = 20V,I_D = 2.4A
R_DS(ON) < 115mΩ @ V_GS=2.5V
R_DS(ON) < 60mΩ @ V_GS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
Application
●Battery protection
●Load switch
●Power management
D
G
S
Schematic diagram
3D
2302
G1
2S
Marking and pin Assignment
SOT-23 top view
PACKAGE MARKING AND ORDERING INFORMATION
Device Marking
Device
Device Package
Reel Size
2302
SSF2302
SOT-23
Ø180mm
Tape width
8 mm
Quantity
3000 units
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
I_D (25℃)
Drain Current-Continuous@ Current-Pulsed (Note 1)
I_D (70℃)
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
THERMAL CHARACTERISTICS
Thermal Resistance,Junction-to-Ambient (Note 2)
R_θJA
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ON CHARACTERISTICS (Note 3)
BV_DSS
I_DSS
I_GSS
V_GS=0V I_D=250μA
V_DS=20V,V_GS=0V
V_GS=±8V,V_DS=0V
Gate Threshold Voltage
V_GS(th)
V_DS=V_GS,I_D=250μA
Limit
20
±8
2.4
1.7
10
0.9
-55 To 150
Unit
V
V
A
A
A
W
℃
140
℃ /W
Min Typ Max
20
1
±100
0.65 0.95 1.2
Unit
V
μA
nA
V
©Silikron Semiconductor CO.,LTD.
1
http://www.silikron.com
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