SSF11NS65 Datasheet, PDF (1/8 Pages) Silikron Semiconductor Co.,LTD. – High dv/dt and avalanche capabilities

Main Product Characteristics:
V_DSS
680V
R_DS(on) 0.36ohm(typ.)
I_D
11A
Features and Benefits:
Feathers:
„ High dv/dt and avalanche capabilities
„ 100% avalanche tested
„ Low input capacitance and gate charge
„ Low gate input resistance
TO220
SSF11NS65
Marking and pin
Assignment
Schematic diagram
Description:
The SSF11NS65 series MOSFETs is a new technology. which combines an innovative super junction
technology and advance process. this new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
I_D @ TC = 25°C
I_D @ TC = 100°C
I_DM
P_D @TC = 25°C
V_DS
V_GS
E_AS
I_AS
T_J T_STG
Parameter
Continuous Drain Current, V_GS @ 10V①
Continuous Drain Current, V_GS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.5mH
Avalanche Current @ L=22.5mH
Operating Junction and Storage Temperature Range
Max.
11
7
44
162
1.5
680
± 30
281
5
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2011.07.20
www.silikron.com
Version : 1.1
page 1 of 8