SSBR10100CT Datasheet, PDF (1/2 Pages) Silikron Semiconductor Co.,LTD. – High Junction Temperature

SSBR10100CT
SSBR10100CTF
Main Product Characteristics:
IF
2×5A
VRRM
100V
T_j(max)
Vf(max)
150C
0.8V
Features and Benefits:
„ High Junction Temperature
„ High ESD Protection, IEC Model ±10Kv
„ High Forward & Reverse Surge capability
Description:
Schottky Barrier Rectifier designed for high frequency
switch model power supplies such as adaptors and
DC/DC convertors; this product special design for high
forward and reverse surge capability
TO220
SSBR10100CT
TO220F
SSBR10100CTF
Absolute Rating:
Symbol
Characterizes
Value
Unit
V_RRM
V_R(RMS)
I_F(AV)
Peak Repetitive Reverse Voltage
RMS Reverse Voltage
Average Forward Current
Per diode
Per device
100
V
70
V
5
A
10
A
I_FSM Non Repetitive Surge Forward Current(tp=8.3ms sinusoidal)
120
A
I_RRM Peak Repetitive Reverse Surge Current(Tp=2us)
T_J
Maximum operation Junction Temperature Range
T_stg Storage Temperature Range
1
A
-50~150
℃
-50~150
℃
Thermal Resistance
Symbol
Characterizes
R_θJC
R_θJC
Maximum Thermal Resistance Junction To
Case
TO220
TO220F
Electrical Characterizes @T_A=25℃ unless otherwise specified
Symbol
Characterizes
Min Typ Max Unit
Value
2
4
Unit
℃/W
℃/W
Test Condition
V_R
Reverse Breakdown Voltage 100
V_F
Forward Voltage Drop
I_R
Leakage Current
0.8
0.75
0.1
5
V I_R=0.5mA
V
I_F=5A, T_J=25℃
I_F=5A, T_J=125℃
mA
V_R=100V, T_J=25℃
V_R=100V, T_J=125℃
©Silikron Semiconductor CO.,LTD.
2009.5.15
www.silikron.com
Version : 1.0
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