BSS138W Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Main Product Characteristics:
V_DSS
50V
R_DS(on) 1.4Ω (typ.)
I_D
0.2A
SOT-323
Features and Benefits:
 Advanced MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 ESD Rating：1000V HBM
 150℃ operating temperature
BSS138W
Marking and Pin
Assignment
Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating:
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V①
Pulsed Drain Current②
Power Dissipation③
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Max.
0.2
0.8
0.2
50
± 20
-55 to +150
Symbol
Characteristics
Typ.
Max.
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
625
Units
A
W
V
V
°C
Units
℃/W
©Silikron Semiconductor CO., LTD.
2013.11.05
www.silikron.com
Version: 1.1
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