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| 2N7002KU Datasheet, PDF (1/7 Pages) KEC(Korea Electronics) – N Channel MOSFET | |||
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Main Product Characteristics:
VDSS
60V
RDS(on) 3Ω(max.)
ID
0.3A
SOT-23
Features and Benefits:
ï® Advanced MOSFET process technology
ï® Special designed for PWM, load switching and
general purpose applications
ï® Ultra low on-resistance with low gate charge
ï® Fast switching and reverse body recovery
ï® ESD Ratingï¼2000V HBM
ï® 150â operating temperature
2N7002KU
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
IDM
PD @TC = 25°C
VDS
VGS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10Vâ
Pulsed Drain Currentâ¡
Power Dissipationâ¢
Drain-Source Voltage
Gate-to-Source Voltage
Operating Junction and Storage Temperature Range
Thermal Resistance
Max.
0.3
1.2
0.63
60
± 20
-55 to +150
Symbol
Characterizes
Typ.
Max.
RθJA
Junction-to-ambient (t ⤠10s) â£
â
200
Units
A
W
V
V
°C
Units
â/W
©Silikron Semiconductor CO., LTD.
2012.04.20
www.silikron.com
Version: 1.0
page 1 of 7
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