2N7002KG8 Datasheet, PDF (1/6 Pages) Silikron Semiconductor Co.,LTD. – Advanced trench MOSFET process technology

Main Product Characteristics:
V_DSS
60V
R_DS(on) 7.5ohm(max.)
I_D
A
Features and Benefits:
 Advanced trench MOSFET process technology
 Special designed for PWM, load switching and
general purpose applications
 Ultra low on-resistance with low gate charge
 Fast switching and reverse body recovery
 150℃ operating temperature
SOT-363
2N7002KG8
Schematic diagram
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications
Absolute max Rating:
Drain-Source Voltage
Gate-Source Voltage
Parameter
Drain Current-Continuous@ Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
Unit
60
V
±20
V
0.115
A
0.8
A
0.38
W
-55 To 150
℃
Thermal Resistance
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
328
℃/W
©Silikron Semiconductor CO., LTD.
2011.07.17
www.silikron.com
Version: 1.1
page 1 of 6