SA482P67K65 Datasheet, PDF (3/6 Pages) Silan Microelectronics Joint-stock – PWM CONTROLLER WITH BUILTIN MOSFET

SA482X67K65
ELECTRICAL CHARACTERISTICS (sense MOSFET part, unless otherwise specified, Tamb=25°C)
Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn On Delay Time
Rise Time
Turn Off Delay Time
Fall Time
Total Gate Charge
(Gate-Source+Gate-Drain)
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
RDS(ON)
Gfs
Ciss
Coss
Crss
Td(on)
Tr
Td(off)
Tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=50µA
VDS=Max. VGS=0V
VDS=0.8Max. VGS=0V
Tamb=125°C
Min.
650
--
--
VGS=10V, ID=0.5A
--
VDS=50V, ID=0.5A
1.5
--
VGS=0V, VDS=25V, f=1MHz --
--
--
--
VDD=0.5BVDSS, ID=1A
--
--
--
VGS=10V, ID=1A,
VDD=0.5BVDSS
--
--
Typ.
--
--
--
5.0
--
550
38
17
20
15
55
25
--
3
12
Max.
--
50
200
6.0
--
--
--
--
--
--
--
--
35
--
--
Unit
V
µA
µA
Ω
S
pF
nS
nC
ELECTRICAL CHARACTERISTICS (control part, unless otherwise specified, Tamb=25°C)
Characteristics
Undervoltage Section
Start Threshold Voltage
Stop Threshold Voltage
Oscillator Section
Oscillate Frequency
Frequency Change With
Temperature
Maximum Duty
Feedback Section
Feedback Source Current
Shutdown Feedback Voltage
Shutdown Delay Current
Reference Voltage
Output Voltage
Temperature Stability
Current Limit
Peak Current Limit
Symbol
Test conditions
Vstart
Vstop
VFB=0
VFB=0
FOSC
--
Dmax
-25°&”Tamb”+85°C
IFB
VSD
Idelay
0V”VFB”3V
VFB•6.5V
5V”VFB”VSD
Vref
ǻVrefǻT -25°&”Tamb”+85°C
Iover Max. inductor current
Min. Typ. Max. Unit
14
15
16
V
8.4
9
9.6
V
61
67
73 KHz
--
±5
±10
%
72
77
82
%
0.8
1.0
1.2
mA
6.9
7.5
8.1
V
4
5
6
µA
4.80 5.00 5.20
V
--
0.3
0.6 mV/°C
1.89
2.15
2.41
A
˄To be continued˅
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.4 2007.07.05
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