SVD5N60AT Datasheet, PDF (2/7 Pages) Silan Microelectronics Joint-stock – 5A, 600V NCHANNEL MOSFET

SVD5N60AT/SVD5N60AF
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RșJC
RșJA
SVD5N60AT
1.25
62.5
SVD5N60AF
3.79
62.5
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Parameter
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=2A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V,ID=4.4A,
RG=25Ω
(Note 3,4)
VDS=480V,ID=4.4A,
VGS=10V
(Note 3,4)
Min.
600
--
--
2.0
Typ.
--
--
--
--
Max.
--
10
±100
4.0
Unit
V
µA
nA
V
--
2.0 2.4
Ω
-- 672 --
--
66
--
pF
--
4.7
--
--
27
--
--
19
--
ns
-- 160 --
--
22
--
-- 19.8 --
--
4
--
nC
--
7.2
--
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Symbol
Test conditions
Continuous Source Current
IS
Integral Reverse P-N
Pulsed Source Current
Junction Diode in the
ISM
MOSFET
Diode Forward Voltage
VSD IS=5.0A,VGS=0V
Reverse Recovery Time
Trr
IS=5.0A,VGS=0V,
Reverse Recovery Charge
Qrr dIF/dt=100A/µs (Note 3)
Notes:
1. L=30mH,IAS=4.4A,VDD=85V,RG=25Ω,starting TJ=25°C;
2. Repetitive Rating: Pulse width limited by maximum junction temperature;
3. Pulse Test: Pulse width ”300ȝs,Duty cycle”2%;
4. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ. Max.
--
5.0
--
16
--
1.4
300 --
2.2
--
Unit
A
V
ns
µC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0
2009.07.09
Page 2 of 7