3VD396500YL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – HIGH VOLTAGE MOSFET CHIPS

3VD396500YL
3VD396500YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD396500YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology;
¾ Advanced termination scheme to provide enhanced
voltage-blocking capability;
¾ Avalanche Energy Specified;
¾ Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode;
¾ The chips may packaged in TO-220 type and the
typical equivalent product is 840;
¾ The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers;
¾ Die size: 4.13mm*3.98mm;
¾ Chip Thickness: 300±20μm;
¾ Top metal: Al, Backside Metal: Ag.
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (TO-220 Package)
Operation Junction Temperature
Storage Temperature
Symbo
l
VDS
V GS
ID
PD
TJ
Tstg
Ratings
500
±20
8.0
74
-55～+150
-55～+150
Unit
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltag e
Symbol
Test conditions
BVDSS VGS=0V, ID=250µA
VTH
IDSS
VGS= VDS, ID=250µA
VDS=500V, VGS=0V
RDS(on) VGS=10V, ID=4.0A
IGSS VGS=±30V, VDS=0V
VFSD IS=8.0A, VGS=0V
Min.
500
2.0
-
Typ.
-
-
-
Max.
-
4.0
1.0
Unit
V
V
µA
- 0.76 0.9
Ω
-
- ±100 nA
-
-
1.4
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0 2008.07.28
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