3VD395650YL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – HIGH VOLTAGE MOSFET CHIPS

3VD395650YL
3VD395650YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD395650YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated in
advanced silicon epitaxial planar technology;
¾ Advanced termination scheme to provide enhanced
voltage-blocking capability;
¾ Avalanche Energy Specified;
¾ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode;
¾ The chips may packaged in TO-220 type and the typical
equivalent product is 7N65;
¾ The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers;
¾ Die size: 4.04mm*3.88mm;
¾ Chip Thickness: 300±20μm;
¾ Top metal: Al, Backside Metal: Ag.
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
650
V
Gate-Source Voltage
VGS
±30
V
Drain Current
ID
7.0
A
Power Dissipation (TO-220 Package)
PD
147
W
Operation Junction Temperature
TJ
-55～+150
°C
Storage Temperature
Tstg
-55～+150
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltage
Symbol
BVDSS
VTH
IDSS
Test conditions
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=650V, VGS=0V
RDS(on) VGS=10V, ID=3.5A
IGSS VGS=±30V, VDS=0V
VFSD IS=7.0A, VGS=0V
Min. Typ. Max. Unit
650
-
-
V
2.0
-
4.0
V
-
-
1.0 µA
-
-
1.4
Ω
-
- ±100 nA
-
-
1.4
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2008.10.15
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