3VD393600YL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – HIGH VOLTAGE MOSFET CHIPS

3VD393600YL
3VD393600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø 3VD393600YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology.
Ø Advanced termination scheme to provide enhanced
voltage-blocking capability.
Ø Avalanche Energy Specified
Ø Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
Ø The chips may packaged in TO-220 type and the
typical equivalent product is 06N60.
Ø The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers.
Ø Die size: 4.03mm*3.76mm.
Ø Chip Thickness: 300±20µm.
Ø Top metal : Al, Backside Metal : Ag.
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Drain Current
ID
7
A
Power Dissipation (TO-220 Package) PD
110
W
Operation Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
-55̚+150
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
Source-Drain Forward on Voltage
Symbol
BVDSS
VTH
IDSS
Test conditions
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=600V, VGS=0V
RDS(on) VGS=10V, ID=3.5A
IGSS
VFSD
VGS=±30V, VDS=0V
IS=7A, VGS=0V
Min Typ Max Unit
600
V
2
4
V
1
µA
1.2
Ω
±100 nA
1.3
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.07.02
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