3VD379500YL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – HIGH VOLTAGE MOSFET CHIPS

3VD379500YL
3VD379500YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø 3VD379500YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology;
Ø Advanced termination scheme to provide enhanced
voltage-blocking capability;
Ø Avalanche Energy Specified;
Ø Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode;
Ø The chips may packaged in TO-220 type;
Ø The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers;
Ø Die size: 3.8mm*2.8mm;
Ø Chip Thickness: 300±20µm;
Ø Top metal : Al, Backside Metal : Ag.
3
1
PAD1:GATE PAD3:SOURCE
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
500
V
Gate-Source Voltage
VGS
±20
V
Drain Current
ID
5.5
A
Power Dissipation (TO-220 Package) PD
74
W
Operation Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
-55̚+150
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltage
Symbol
Test conditions
BVDSS VGS=0V, ID=250µA
VTH VGS= VDS, ID=250µA
IDSS VDS=500V, VGS=0V
RDS(on) VGS=10V, ID=2.7A
IGSS VGS=±20V, VDS=0V
VFSD IS=4.5A, VGS=0V
Min Typ Max Unit
500
-
-
V
2
-
4
V
-
-
1
µA
-
-
1.5
Ω
-
- ±100 nA
-
-
1.6
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2008.06.03
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