3VD250600YL Datasheet, PDF (1/2 Pages) Silan Microelectronics Joint-stock – HIGH VOLTAGE MOSFET CHIPS

3VD250600YL
3VD250600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD250600YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology.
¾ Advanced termination scheme to provide enhanced
voltage-blocking capability.
¾ Avalanche Energy Specified
¾ Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
¾ The chips may packaged in TO-251 type and the
typical equivalent product is 2N60.
¾ The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers.
¾ Die size: 2.59mm*2.42mm.
¾ Chip Thickness: 300±20μm.
¾ Top metal : Al, Backside Metal : Ag.
1
3
PAD1-Gate PAD3-Source
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation (TO-251 Package)
Operation Junction Temperature
Storage Temperature
Symbo
l
VDS
V GS
ID
PD
TJ
Tstg
Ratings
600
±30
2.0
44
-55～+150
-55～+150
Unit
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltage
Symbo
l
BVDSS
VTH
IDSS
Test conditions
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=600V, VGS=0V
RDS(on) VGS=10V, ID=1.0A
IGSS VGS=±30V, VDS=0V
VFSD IS=2.0A, VGS=0V
Min. Typ. Max. Unit
600
-
-
V
2.0
-
4.0
V
-
-
1.0 µA
-
4.1 4.6
Ω
-
- ±100 nA
-
-
1.4
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0 2008.07.28
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