3VD223600NEYL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – NCH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE

3VD223600NEYL
3VD223600NEYL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE
DESCRIPTION
Ø 3VD223600NEYL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology.
Ø ESD improved capability
Ø Advanced termination scheme to provide enhanced
voltage-blocking capability.
Ø Avalanche Energy Specified
Ø Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
Ø The chips may packaged in TO-92 type.
Ø The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers.
Ø Die size: 2.23mm*1.39mm.
Ø Chip Thickness: 300±20µm.
Ø Top metal : Al, Backside Metal : Ag.
CHIP TOPOGRAPHY
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Symbol
Ratings
Unit
Drain-Source voltage
VDS
600
V
Gate-Source Voltage
VGS
±30
V
Drain Current
ID
300
mA
Operation Junction Temperature
TJ
150
ć
Storage Temperature
Tstg
-55-150
ć
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-Drain Diode Forward on
Voltage
Symbol
V(BR)DSS
Vth(GS)
lGSS
IDSS
RDS(on)
VFSD
Test conditions
ID=1mA
ID=50uA VDS=VGS
VGS=±20V, VDS=0V
VDS=600V, VGS=0V
ID=0.4A, VGS=10V
ID=0.8A,VGS=0V
Min Typ Max Unit
600 ---
----
V
3
--- 4.5 V
---
--- ±10 nA
---
---
1
µA
---
---
15
Ÿ
---
---
1.6
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.11.20
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