3VD212800YL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – HIGH VOLTAGE MOSFET CHIPS

3VD212800YL
3VD212800YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
Ø 3VD212800YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated
in advanced silicon epitaxial planar technology.
Ø Advanced termination scheme to provide enhanced
voltage-blocking capability.
Ø Avalanche Energy Specified
Ø Source-to-Drain Diode Recovery Time Comparable to
a Discrete Fast Recovery Diode
Ø The chips may packaged in TO-220 type and the
typical equivalent product is 1N80.
Ø The packaged product is widely used in AC-DC
power suppliers, DC-DC converters and H-bridge
PWM motor drivers.
Ø Die size: 2.12mm*2.02mm.
Ø Chip Thickness: 300±20µm.
Ø Top metal : Al, Backside Metal : Ag.
3
1
PAD1:GATE PAD3:SOURCE
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
800
V
Gate-Source Voltage
VGS
±30
V
Drain Current
ID
1.0
A
Power Dissipation (TO-220 Package) PD
45
W
Operation Junction Temperature
TJ
-55̚+150
°C
Storage Temperature
Tstg
-55̚+150
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
Source-Drain Diode Forward on
Voltage
Symbol
BVDSS
VTH
IDSS
Test conditions
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=800V, VGS=0V
RDS(on) VGS=10V, ID=0.5A
IGSS VGS=±20V, VDS=0V
VFSD IS=1A, VGS=0V
Min Typ Max Unit
800
-
-
V
3
-
4.5
V
-
-
1
µA
-
-
16
Ω
-
-
±10 µA
-
-
1.6
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2008.05.30
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