3VD212600YL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – HIGH VOLTAGE MOSFET CHIPS

3VD212600YL
3VD212600YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD212600YL is a High voltage N-Channel enhancement
mode power MOS-FET chip fabricated in advanced silicon
epitaxial planar technology.
¾ Advanced termination scheme to provide enhanced voltage-
blocking capability.
¾ Avalanche Energy Specified
¾ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
¾ The chips may packaged in TO-251 type and the typical
equivalent product is 1N60A.
¾ The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers.
¾ Die size: 2.12mm*2.02mm.
¾ Chip Thickness: 300±20μm.
¾ Top metal: Al, Backside Metal: Ag.
3
1
PAD1:GATE PAD3:SOURCE
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation(TO-251 Package)
Operation Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
PD
TJ
Tstg
Ratings
600
±30
1.0
28
-55～+150
-55～+150
Unit
V
V
A
W
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain -Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source Leakage Current
Static Drain- Source On State
Resistance
Gate-Source Leakage Current
Source-Drain Diode Forward On
Voltage
Symbol
BVDSS
VTH
IDSS
Test conditions
VGS=0V, ID=250µA
VGS= VDS, ID=250µA
VDS=600V, VGS=0V
RDS(on) VGS=10V, ID=0.5A
IGSS VGS=±30V, VDS=0V
VFSD IS=1.0A, VGS=0V
Min Typ Max Unit
600
-
-
V
2.0
-
4.0
V
-
-
1.0
µA
-
8.1
8.5
Ω
-
-
±100 nA
-
-
1.4
V
HANGZHOU MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.0 2008.08.23
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