3VD186700YL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – HIGH VOLTAGE MOSFET CHIPS

3VD186700YL
3VD186700YL HIGH VOLTAGE MOSFET CHIPS
DESCRIPTION
¾ 3VD186700YL is a High voltage N-Channel
enhancement mode power MOS-FET chip fabricated in
advanced silicon epitaxial planar technology.
¾ Advanced termination scheme to provide enhanced
voltage-blocking capability.
¾ Avalanche Energy Specified
¾ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
¾ The chips may packaged in TO-251-3L type and the
typical equivalent product is 1N70.
¾ The packaged product is widely used in AC-DC power
suppliers, DC-DC converters and H-bridge PWM motor
drivers.
¾ Die size: 1.96mm*1.78mm.
¾ Chip Thickness: 300±20μm.
¾ Top metal: Al, Backside Metal: Ag.
CHIP TOPOGRAPHY
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
700
V
Gate-Source Voltage
VGS
±30
V
Drain Current
ID
1.0
A
Operation Junction Temperature
TJ
150
°C
Storage Temperature
Tstg
-55-150
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-Resistance
Source-Drain Diode Forward On
Voltage
Symbol
V(BR)DSS
Vth(GS)
lGSS
IDSS
RDS(on)
Test conditions
VGS = 0V, ID=250μA
ID=250μA ,VDS=VGS
VGS=±30V, VDS=0V
VDS=700V, VGS=0V
ID=0.4A, VGS=10V
VFSD
ID=1.0A,VGS=0V
Min.
700
2.0
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Typ.
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Max. Unit
----
V
4.0
V
±100 nA
1.0 µA
14.5 Ω
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1.4
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2008.10.15
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