3VD060060NEJL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – NCH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE

3VD060060NEJL
3VD060060NEJL N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE
DESCRIPTION
Ø 3VD060060JL is a N-Channel enhancement mode
MOS-FET chip fabricated in advanced silicon epitaxial
planar technology.
Ø Zener diode ESD protected up to 2KV
Ø High density cell design for low RDS(ON)
Ø Rugged and reliable.
Ø Fast switching performance.
Ø High saturation current capability.
Ø The chips may be packaged in SOT-23 type and the
typical equivalent product is 2N7002K.
Ø The packaged product is widely used in the small servo
motor control, power MOS-FET gate drivers, and other
switching applications.
Ø Die size: 0.60mm*0.60mm.
Ø Chip Thickness: 230±20µm.
Ø Top metal : Al, Backside Metal : Au.
CHIP TOPOGRAPHY
EQUIVALENT CIRCUIT
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Drain Current
ID
300
mA
Power Dissipation (SOT-23)
PD
350
mW
Operation Junction Temperature TJ
150
°C
Storage Temperature
Tstg
-55-150
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Symbol
Test conditions
Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=10µA
Gate-Threshold Voltage*
Vth(GS)
VDS= VGS, ID=250µA
Gate-body Leakage
lGSS
VDS=0V, VGS =±20V
Zero Gate Voltage Drain Current IDSS
VDS=60V, VGS =0V
Drain-Source On-Resistance*
RDS(on)
VGS=10V, ID=500mA
VGS=5V, ID=50mA
Note:* Pulse test, pulse width”300µS, duty cycle”2%
Min Typ Max Unit
60
--
--
V
1
-- 2.5
--
-- ±10 µA
--
--
1
µA
--
-- 2.0
Ÿ
--
-- 3.0
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.09.03
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