3VD045060JL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – Nchannel MOSFET CHIPS

3VD045060JL
3VD045060JL N-channel MOSFET CHIPS
DESCRIPTION
Ø 3VD045060JL is a N-Channel enhancement mode
MOS-FET chip fabricated in advanced silicon
2
epitaxial planar technology.
Ø High density cell design for low RDS(ON)
Ø Rugged and reliable.
Ø Fast switching performance.
1
Ø High saturation current capability.
Ø The chips may be packaged in SOT-23 type and the
typical equivalent product is 2N7002.
Ø The packaged product is widely used in the small
servo motor control, power MOS-FET gate drivers,
and other switching applications.
Ø Die size: 0.53mm*0.53mm.
PAD1: GATE PAD2: SOURCE
CHIP TOPOGRAPHY
Ø Chip Thickness: 230±20µm.
Ø Top metal : Al, Backside Metal : Au.
ABSOLUTE MAXIMUM RATINGS (Tamb=25°C)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
Drain Current
ID
115
mA
Power Dissipation (SOT-23)
PD
200
mW
Operation Junction Temperature TJ
150
°C
Storage Temperature
Tstg
-55-150
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameter
Symbol
Test conditions
VGS=0V, ID=10µA
Drain-Source Breakdown Voltage V(BR)DSS
VGS =0V, ID=3mA
Gate-Threshold Voltage*
Vth(GS)
VDS= VGS, ID=250µA
Gate-body Leakage
lGSS
VDS=0V, VGS =±20V
Zero Gate Voltage Drain Current IDSS
VDS=60V, VGS =0V
On-state Drain Current*
ID(ON)
VGS=10V, VDS=7V
Drain-Source On-Resistance*
RDS(on)
VGS=10V, ID=500mA
VGS=5V, ID=50mA
Drain-Source On- Voltage *
VDS(on)
VGS=10V, ID=500mA
VGS=5V, ID=50mA
Forward Transconductance*
gts
VDS=10V, ID=200mA
Diode Forward Voltage
VSDF
IS=115mA, VGS =0V
Note:* Pulse test, pulse width”300µS, duty cycle”2%
Min Typ Max Unit
60
60
V
1
2.5
±100 nA
1
µA
500
mA
1.2 7.5
Ÿ
1.7 7.5
3.75
V
0.375
80
ms
1.2
V
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.07.02
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