3PT068080JL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – PHOTO TRANSISTOR CHIPS

3PT068080JL
3PT068080JL PHOTO TRANSISTOR CHIPS
DESCRIPTION
Ø 3PT068080JL is NPN phototransistor chips that
fabricated in silicon epitaxial planar technology;
Ø The chips are widely used in photo-coupler for
switching power suppliers;
Ø It has low dark current, high sensitivity, high
responsible time etc;
Ø The top side electrode material is Al, and the
backside electrode material is Au;
Ø Chip Size: 680µm×450µm;
Ø Chip Thickness: 220±20µm;
Ø Emitter PAD Size(E): 130µm×105µm;
Ø Base PAD Size(B): 40µm × 40µm (only for chip
probing).
Chip Topography
E: Emitter B: Base
ABOSULATE MAXIMUM RATINGS
Parameters
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
TJ
TSTG
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Characteristics
Symbol
Test conditions
Collector-Emitter Breakdown
BVCEO IC=100µA, IB=0µA
Voltage
Emitter-Collector Breakdown
Voltage
Collector Dark Current
BVECO
ICEO
IC=10µA, IB=0µA
VCE=20V, H=0mW/cm²
VCE=80V, H=0mW/cm²
Collector Emitter Saturation
IC=2mA, IB=100µA
VCE(SAT)
Voltage
IC=20mA, IB=100µA
Rise/ Fall Time
Tr/Tf VCE=2V, IC=2mA, RL=100 Ω
Current Gain
hFE VCE=5V, IC=2mA
Collector-Base Capacitance CCB f=1MHz, VCB=3V
Ratings
125
-40~125
Unit
°C
°C
Min.
Max.
Unit
80
V
7
V
50
nA
150
nA
0.2
V
2
V
10
µs
700
7.4
pF
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.07.02
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