2SF292200CYY Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – ULTRAFAST RECOVERY DIODE CHIPS

2SF292200CYY
2SF292200CYY ULTRAFAST RECOVERY DIODE CHIPS
DESCRIPTION
Ø 2SF292200CYY is a ultrafast recovery diode chips
fabricated in silicon epitaxial planar technology;
Ø Ultrafast recovery times;
Ø High current capability;
Ø High surge current capability;
Ø Low forward voltage drop;
Ø Low reverse current leakage;
Ø Top metal is Ag, Back metal is Ag;
Ø Chip Size: 2920µm X 2920µm;
Ø Chip Thickness: 280±20µm;
Chip Topography and Dimensions
La: Chip Size:2920 µm;
Lb: Pad Size: 2840 µm;
ORDERING SPECIFICATIONS
Product Name
2SF292200CYY
Specification
For Au and AlSi wire bonding
package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward RectifiedCurrent@Tc=150°C
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
200
15
200
175
-55~175
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25ć)
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Reverse recovery time
Symbol
VBR
VF
IR
Trr
Test Conditions
IR=50ȝA
IF=15A
VR=200V
IF=1A,di/dt=50A/ȝs
Min.
200
--
--
--
Max.
--
1.05
10
35
Unit
V
V
ȝA
ns
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2008.06.06
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