2SB108100MA Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – LOW IR SCHOTTKY BARRIER DIODE CHIPS

2SB108100MA
2SB108100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB108100MA is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Ø Due to special schottky barrier structure, the chips
have very low reverse leakage current ( typical
IR=0.002mA@ Vr=100V ) and maximum 150°C
operation junction temperature;
Ø Low power losses, high efficiency;
Ø Guard ring construction for transient protection;
Ø High ESD capability;
Ø High surge capability;
Chip Topography and Dimensions
La: Chip Size: 1080µm;
Lb: Pad Size: 985µm;
Ø Packaged products are widely used in switching
power suppliers, polarity protection circuits and
ORDERING SPECIFICATIONS
other electronic circuits;
Ø Chip Size: 1080µm X 1080µm;
Ø Chip Thickness: 280±20µm;
Product Name
2SB108100MAYY
Specification
For Axial leads package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
100
2
50
150
-40~150
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25ć)
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VBR
VF
IR
Test Conditions
IR=1mA
IF=2A
VR=100V
Min.
100
--
--
Max.
--
0.85
1
Unit
V
V
mA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2007.04.27
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