2SB082020MAJL Datasheet, PDF (1/1 Pages) Silan Microelectronics Joint-stock – SCHOTTKY BARRIER DIODE CHIPS

2SB082020MAJL
2SB082020MAJL SCHOTTKY BARRIER DIODE CHIPS
DESCRIPTION
Ø 2SB082020MAJL is a schottky barrier diode chips
fabricated in silicon epitaxial planar technology;
Ø Low power losses, high efficiency;
Ø Guard ring construction for transient protection;
Ø High ESD capability;
Ø High surge capability;
Ø Packaged products are widely used in switching
power suppliers, polarity protection circuits and
other electronic circuits.;
Ø Chip Size:830µm X 830µm;
Ø Chip Thickness: 210±20µm;
Chip Topography and Dimensions
La: Chip Size: 830µm;
Lb: Pad Size: 750µm;
ORDERING SPECIFICATIONS
Product Name
2SB082020MAJL
Specification
For Au and AlSi wire bonding
package
ABSOLUTE MAXIMUM RATINGS
Parameters
Maximum Repetitive Peak Reverse Voltage
Average Forward Rectified Current
Peak Forward Surge Current@8.3ms
Maximum Operation Junction Temperature
Storage Temperature Range
Symbol
VRRM
IFAV
IFSM
TJ
TSTG
Ratings
20
1
40
150
-40~150
Unit
V
A
A
°C
°C
ELECTRICAL CHARACTERISTICS (Tamb=25°C)
Parameters
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VBR
VF1
VF2
IR1
IR2
Test Conditions
IR=50ȝA
IF=1A
IF=2A
VR=20V
VR=10V
Min.
20
--
--
--
--
Max.
--
0.530
0.595
10
1
Unit
V
V
V
ȝA
ȝA
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http: www.silan.com.cn
REV:1.0 2008.05.19
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